Author:
Suijker Erwin M.,Sudow Mattias,Fagerlind Martin,Rorsman Niklas,de Hek A. P.,van Vliet F. E.
Cited by
5 articles.
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1. A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology;2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2021-08-25
2. X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs;IET Microwaves, Antennas & Propagation;2017-12-12
3. An X-band RLC matched power amplifier using quasi-MMIC technology;Microwave and Optical Technology Letters;2015-09-26
4. A flat gain GaN MMIC power amplifier for X band application;Journal of Semiconductors;2014-12
5. Integrated AlGaN/GaN HEMTs in MCM-D technology;2010 Proceedings 60th Electronic Components and Technology Conference (ECTC);2010