Compact X-band SiGe power amplifier for single-chip phased array radar applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/iet-map.2012.0014?crawler=true&mimetype=application/pdf
Reference23 articles.
1. A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier
2. Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues
3. CMOS SPDT T/R switch for X-band, on-chip radar applications
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An X-Band Class-B Push-Pull Power Amplifier on a 0.25 μm SiGe-C Process;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04
2. X-band Phased-Array Transmitter in 180-nm SiGe BiCMOS Technology with Stacked Power Amplifier;Lecture Notes in Electrical Engineering;2018
3. X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs;IET Microwaves, Antennas & Propagation;2017-12-12
4. Continuous-Mode Power Amplifiers;Signals and Communication Technology;2015-12-30
5. X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications;IET Microwaves, Antennas & Propagation;2015-06
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