Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues

Author:

Bhaumik S.,Kettle D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference10 articles.

1. AlGaAsSb/InGaAs/AlGaAsSb metamorphic HEMTs

2. Agilent Technologies: ‘Advanced Designed System 2006 Update 3’ and ‘Advanced Designed System 2008 Update 3’

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1. Design and analysis of V-Band Low Noise Amplifier for High Speed Data Application using GaAs pHEMT Process Technology;2023 Second International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT);2023-04-05

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3. CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance;IET Circuits, Devices & Systems;2021-05-02

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