Design and analysis of V-Band Low Noise Amplifier for High Speed Data Application using GaAs pHEMT Process Technology-Reference-Cited by-同舟云学术

Design and analysis of V-Band Low Noise Amplifier for High Speed Data Application using GaAs pHEMT Process Technology

Published:2023-04-05 Issue: Volume: Page:
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Container-title:2023 Second International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT)
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Author:

Khobragade Ritu D.¹,Vidhale Bhushan R.¹

Affiliation:

1. G H Raisoni College of Engineering,Department of Electronics and Telecommunication Engineering,Nagpur,India,440016

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10156871/10156874/10157804.pdf?arnumber=10157804

Reference21 articles.

1. 60GHz Wideband LNA MMIC with High Gain;yang;Journal of Semiconductors,2008

2. Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues

3. Design and Performance Analysis of a 60GHz GaAs Low-Noise Amplifier for Millimeter-Wave Applications;wang;IEEE Transactions on Microwave Theory and Techniques,2022

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