Author:
Thomas Sijo,Saminathan T.
Reference10 articles.
1. Harir E, Scher E (2013) 0.5 W X-band SiGe PA with integrated double tuned transformers. In: Microwave symposium digest, 2013 IEEE MTT-S, pp 1–3, June 2013
2. Andrews J, Cressler JD, Kuo W-ML, Grens C, Thrivikraman T, Philips S (2008) An 850 mW X-band SiGe power amplifier. In: Proceedings of the IEEE bipolar/BiCMOS circuit technological meeting, pp 109–112, Oct 2008
3. Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM (2010) A Watt-level stacked-FET linear power amplifier in silicon-on insulator CMOS. IEEE Trans Microw Theory Techn 58(1):57–64
4. Zihir S, Dinc T, Gurbuz Y (2010) Compact X band SiGe power amplifier for single chip phased array radar applications. IET microw Ant Propag 6(8):956–961
5. Darra R, Chi P-S, Tsai Z-M, Kuo J-L, Lin K-Y, Wang H (2010) An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technology. In: IEEE Europe microwave conference, pp 1678–1681, Sept 2010