A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS-Reference-Cited by-同舟云学术

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A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS

Published:2010-01 Issue:1 Volume:58 Page:57-64
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Pornpromlikit S.,Jinho Jeong ,Presti C.D.,Scuderi A.,Asbeck P.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5379166/05352239.pdf?arnumber=5352239

Cited by 119 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact 25-32 GHz High IMRR Double Quadrature CMOS Transmitter for 5G Applications;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Broadband High-Efficiency Watt-Level Millimeter-Wave GaN Power Amplifier for Potential Robust and Cost-Effective 5G RF Front-End Design;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-µm GaAs pHEMT Process;IEEE Microwave and Wireless Technology Letters;2024-04

4. Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS;IEICE Transactions on Electronics;2023-07-01

5. A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT;Micromachines;2023-06-20

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