Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-µm GaAs pHEMT Process
Author:
Affiliation:
1. Institute of Communications Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2. Ultraband Technologies, Inc., Hsin-Chu, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10495307/10445730.pdf?arnumber=10445730
Reference23 articles.
1. Millimeter Wave Mobile Communications for 5G Cellular: It Will Work!
2. 0.01–22-GHz Feedback-Stabilized Single-Supply GaAs Cascode Distributed Amplifiers
3. Analysis and Design of a Broadband Receiver Front End for 0.1-to-40-GHz Application
4. A 0.1–52-GHz Triple Cascode Amplifier With Resistive Feedback
5. A microwave miniaturized linearizer using a parallel diode with a bias feed resistance
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