A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT-Reference-Cited by-同舟云学术

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT

Published:2023-06-20 Issue:6 Volume:14 Page:1276
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Li Jiaxuan¹²^ORCID,Yuan Yang¹²^ORCID,Yuan Bin¹²^ORCID,Fan Jingxin¹²,Zeng Jialong¹²^ORCID,Yu Zhongjun¹²^ORCID

Affiliation:

1. Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China

2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China

Abstract

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 × 1.2 mm2 and included input and output test pads.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Link

https://www.mdpi.com/2072-666X/14/6/1276/pdf

Reference26 articles.

1. A Wideband Triple-Stacked CMOS Distributed Power Amplifier Using Double Inductive Peaking;Kim;IEEE Microw. Wirel. Compon. Lett.,2019

2. Analysis and Design of an Ultrabroadband Stacked Power Amplifier in CMOS Technology;Wu;IEEE Trans. Circuits Syst. II Express Briefs,2016

3. A High-Efficiency, Broadband CMOS Power Amplifier for Cognitive Radio Applications;Huang;IEEE Trans. Microw. Theory Tech.,2010

4. Yang, F., Song, L., and Xu, Y. (2022). C-Band 30 W High PAE Power Amplifier MMIC with Second Harmonic Suppression for Radar Network Application. Micromachines, 13.

5. Ezzeddine, A.K., and Huang, H.C. (2006, January 11–16). Ultra-Broadband GaAs HIFET MMIC PA. Proceedings of the 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, USA.