Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier
Author:
Affiliation:
1. School of Electrical EngineeringSharif University of TechnologyTehranIran
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2015.0134
Reference24 articles.
1. A 2-GHz Highly Linear Efficient Dual-Mode BiCMOS Power Amplifier Using a Reconfigurable Matching Network
2. Elad D. Shaulsky R. Mezhebovsky B.: ‘A novel method for even odd parametric oscillation stability analysis of a microwave power amplifier’.IEEE Microwave Symp. Digest IEEEMTT‐S Int. San Francisco CA USA 2006 pp.1850–1854
3. 12-W $X$-Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules
4. Huet T. Gruenenpuett J. Ouarch Z. et al.: ‘A 8W high efficiency X‐band power pHEMT amplifier’.IEEE Microwave Conf. 2008. EuMC 2008. 38th European Amsterdam The Netherlands 2008 pp.289–292
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2. A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology;International Journal of RF and Microwave Computer-Aided Engineering;2020-11-30
3. Systematic design of hybrid high power microwave amplifiers using large gate periphery GaN HEMTs;AEU - International Journal of Electronics and Communications;2018-02
4. X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs;IET Microwaves, Antennas & Propagation;2017-12-12
5. Design of 6–18-GHz High-Power Amplifier in GaAs pHEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2017-07
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