Design of 6–18-GHz High-Power Amplifier in GaAs pHEMT Technology
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/7963873/07887705.pdf?arnumber=7887705
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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4. Design of Ku Band High Efficiency 4W Power Amplifier in GaAs pHEMT Technology;2023 International Conference on Electrical, Communication and Computer Engineering (ICECCE);2023-12-30
5. Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
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