Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process-Reference-Cited by-同舟云学术

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process

Published:2023-10-20 Issue: Volume: Page:
ISSN:
Container-title:2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)
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Author:

Huang Jingjing¹,Lin Jie¹,Ying Shu²,Hu Shanwen³,Cai Zhikuang¹,Guo Yufeng¹

Affiliation:

1. Nanjing University of Posts and Telecommunications,College of Integrated Circuit Science and Engineering,Nanjing,China

2. Anqing Normal University,School of Electronic Engineering and Intelligent Manufacturing,Anqing,China

3. Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,College of Integrated Circuit Science and Engineering,Nanjing,China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Engineering Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10365709/10365561/10365898.pdf?arnumber=10365898

Reference12 articles.

1. Design study of S-band high-gain drive amplifier based on GaAs pHEMT process [J];Qian;Electronic devices,2021

2. Research and implementation of high-efficiency RF power amplifier [D];Chengxin,2021

3. COMPARATIVE STUDY OF GaN AND GaAs MESFET;Soni;International Journal of Electrical and Electronic Engineering & Telecommunications,2014

4. Ka-band GaAs MMIC Driver Amplifier Design

5. High-power GaN MMIC PA over 40–4000 MHz;Ezzeddine;IEEE MTT-S Int. Dig.,2013

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