Author:
Forouzanfar M.,Joodaki M.
Subject
Electrical and Electronic Engineering
Reference38 articles.
1. Kanto K, Satomi A, Asahi Y, Kashiwabara Y, Matsushita K, Takagi K. An X-band 250 W solid-state power amplifier using GaN power HEMTs. In: 2008 IEEE radio and wireless symposium. p. 77–80.
2. 2 μm InGaP/GaAs Class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power;Jagadheswaran;IEEE Trans Microwave Theory Tech,2016
3. Mediavilla A, Tobia A, Colantonio P. 1 kW compact L-band pulsed power amplifier for Radar applications. In: IEEE Microwaves, Radar and Remote Sensing Symposium (MRRS); 2011. p. 43–6.
4. Implementation of a fully integrated 30-dBm RF CMOS linear power amplifier with power combiner;Javidan;AEU-Int J Electron Commun,2011
5. Implementation of a fully integrated 30-dBm RF CMOS linear power amplifier with power combiner;Javidan;AEU-Int J Electron Commun,2011
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