An X-band GaN HEMT High-Efficiency Switchless Class-G Power Amplifier
Author:
Affiliation:
1. Tsinghua University,Department of Electronic Engineering,Beijing,China,100084
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221938/10221896/10222710.pdf?arnumber=10222710
Reference9 articles.
1. A 700–2800 MHz Switchless Class-G Power Amplifier with Two-Quadrant Modulation for Back-off Efficiency Improvement;chen;IEEE/MTT-S Int Microwave Symp,0
2. Derivative-Based Envelope Design Technique for Wideband Envelope Tracking Power Amplifier with Digital Predistortion;yi;ZTE Communications,2022
3. Wideband lumped-element Wilkinson power dividers using LC-ladder circuits
4. The Orthogonal LMBA: A Novel RFPA Architecture With Broadband Reconfigurability
5. X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs
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1. Class–CTA: Concept and Theoretical Analysis of a High Linearity and Efficiency Power Stage Architecture;IEEE Open Journal of Circuits and Systems;2023
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