260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology
Author:
Affiliation:
1. ICSTNational Chiao Tung University, 1001 University RoadHsinchu300Taiwan
2. School of Electrical EngineeringKorea University145‐Anam‐RoSeongbuk‐GuSeoul136‐701Republic of Korea
3. IHPFrankfurt (Oder)Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.3882
Reference8 articles.
1. Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
2. A 245 GHz LNA in SiGe technology;Schmalz K.;Microw. Wirel. Compon. Lett.,2012
3. SiGe 135‐GHz amplifier with inductive positive feedback operating near f max;Kim H.;Electron. Lett.,2013
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