SiGe 135‐GHz amplifier with inductive positive feedback operating near f max-Reference-Cited by-同舟云学术

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SiGe 135‐GHz amplifier with inductive positive feedback operating near f max

Published:2013-09 Issue:19 Volume:49 Page:1229-1230
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Kim Hyunchul¹,Yun Jongwon¹,Song Kiryong¹,Rieh Jae‐Sung¹

Affiliation:

1. School of Electrical EngineeringKorea University5‐1 Anam‐dongSeongbuk‐guSeoulRepublic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.1660

Reference4 articles.

1. High Power Terahertz and Millimeter-Wave Oscillator Design: A Systematic Approach

2. A 40-GHz Low-Noise Amplifier With a Positive-Feedback Network in 0.18-$\mu{\hbox{m}}$ CMOS

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18- $\mu\text{m}$ SiGe HBT Technology;IEEE Transactions on Circuits and Systems II: Express Briefs;2017-03

2. 260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology;Electronics Letters;2017-02

3. J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe;International Journal of Microwave and Wireless Technologies;2015-05-26

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