A 245 GHz LNA in SiGe Technology
Author:
Affiliation:
1. IHP, Frankfurt (Oder), Germany
2. Fraunhofer IAF, Freiburg i. Br., Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx5/7260/6320642/06308732.pdf?arnumber=6308732
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above fmax/2in Sub-THz/THz Frequencies;IEEE Journal of Solid-State Circuits;2023-09
2. A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks;IEEE Transactions on Circuits and Systems II: Express Briefs;2023
3. SiGe HBTs;Springer Series in Optical Sciences;2021-12-08
4. A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers;2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2021-06-07
5. 220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology;IEEE Microwave and Wireless Components Letters;2021-06
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