A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers-Reference-Cited by-同舟云学术

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A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers

Published:2021-06-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Singh Sumit Pratap,Rahkonen Timo,Leinonen Marko E.,Parssinen Aarno

Funder

Academy of Finland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9489353/9490399/09490435.pdf?arnumber=9490435

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

2. Parametrization of Simplified Memoryless Amplifier Models at 300 GHz;2023 IEEE 34th Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC);2023-09-05

3. Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies;IEEE Journal of Solid-State Circuits;2023-09

4. A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

5. A 220GHz Low Noise Amplifier Based on 130nm SiGe Process;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

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