A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers
Author:
Funder
Academy of Finland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9489353/9490399/09490435.pdf?arnumber=9490435
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Parametrization of Simplified Memoryless Amplifier Models at 300 GHz;2023 IEEE 34th Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC);2023-09-05
2. Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above fmax/2in Sub-THz/THz Frequencies;IEEE Journal of Solid-State Circuits;2023-09
3. A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11
4. A 220GHz Low Noise Amplifier Based on 130nm SiGe Process;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
5. A 260–300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process;IEEE Microwave and Wireless Technology Letters;2023-04
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