A D-Band to J-Band Low-Noise Amplifier with High Gain-Bandwidth Product in an Advanced 130 nm SiGe BiCMOS Technology
Author:
Affiliation:
1. University of Wuppertal,IHCT,Germany
2. IHP - Leibniz-Institut für innovative Mikroelektronik,Germany
Funder
German Research Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10186107/10186112/10186116.pdf?arnumber=10186116
Reference12 articles.
1. A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
2. A 140–220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS
3. A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology
4. A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique
5. SiGe HBT with ft/fmax of 505 GHz/720 GHz;heinemann;2016 IEEE International Electron Devices Meeting (IEDM),0
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1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09
2. A 200 GHz Wideband and Compact Differential LNA Leveraging an Active Balun Input Stage in 16nm FinFET Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
3. An On-Chip Antenna-Coupled Preamplified D-Band to J-Band Total Power Radiometer Chip in 130 nm SiGe BiCMOS Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
4. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
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