A 220GHz Low Noise Amplifier Based on 130nm SiGe Process-Reference-Cited by-同舟云学术

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A 220GHz Low Noise Amplifier Based on 130nm SiGe Process

Published:2023-05-14 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
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Author:

Zhiyuan Shao¹,Peigen Zhou¹,Zhe Chen¹,Jixin Chen¹,Jiayang Yu¹,Zuojun Wang¹,Zekun Li¹,Sidou Zheng¹

Affiliation:

1. Southeast University,State Key Laboratory of Millimeter Wave,Nanjing,China,211189

Funder

National Natural Science Foundation of China

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10275796/10276388/10276901.pdf?arnumber=10276901

Reference11 articles.

1. An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS

2. Common Emitter Low Noise Amplifier with 19 dB Gain for 140 GHz to 220 GHz in 130 nm SiGe

3. A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers

4. A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology

5. A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power

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