SiGe HBTs
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-73738-2_20
Reference47 articles.
1. Iyer, S. S., Patton, G. L., Delage, S. S., Tiwari, S., & Stork, J. M. C. (1987). Silicon-Germanium base heterojunction bipolar transistors by molecular beam epitaxy. In Technical digest of international electron device meeting, pp. 874–876.
2. Kamins, T. I., et al. (1989). Small-geometry, high-performance, Si-Si1-xGex heterojunction bipolar transistors. IEEE Electron Device Letters, 10(11), 503–505.
3. Crabbé, E. F., Meyerson, B. S., Stork, J. M. C., & Harame, D. L. (1993). Vertical profile optimization of very high frequency epitaxial Si and SiGe-base bipolar transistors. In IEDM technical digest, pp. 83–86.
4. Rieh, J.-S., et al. (2002). SiGe HBTs with cut-off frequency of 350 GHz. In Technical digest of international electron devices meeting, pp. 771–774.
5. Heinemann, B., et al. (2010). SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay. In 2010 International Electron Devices Meeting, 6–8 Dec. 2010, pp. 30.5.1–30.5.4, https://doi.org/10.1109/IEDM.2010.5703452.
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