A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
Author:
Affiliation:
1. Institute for High-Frequency and Communication Technology (IHCT), University of Wuppertal, Wuppertal, Germany
2. IHP-Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany
Funder
Deutsche Forschungsgemeinschaft (DFG) through the Project DotSeven2IC
Project C04
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/9809766/09751750.pdf?arnumber=9751750
Reference41 articles.
1. Optimum Design of Stepped Transmission-Line Transformers
2. The scattering parameters and directional coupler analysis of characteristically terminated asymmetric coupled transmission lines in an inhomogeneous medium
3. 160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm
4. A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS
5. A 230-GHz SiGe Amplifier With 21.8-dB Gain and 3-dBm Output Power for Sub-THz Receivers
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2. A 15.7-dBm 164–270 GHz Power Amplifier with Asymmetric Slotline-Based Series-Parallel Combiner in 130-nm SiGe BiCMOS Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
3. Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
4. A 206–264 GHz Power Amplifier Based on a High-Linearity Cascode Core With 15 dB Gain and 12.2-dBm P sat in 130-nm SiGe BiCMOS;IEEE Transactions on Terahertz Science and Technology;2024-03
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