A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS
Author:
Funder
German Federal Ministry of Education and Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8011414/8911531/08891670.pdf?arnumber=8891670
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RapidIP - automated design of a 220–260 GHz power amplifier in a 130 nm BiCMOS technology;AEU - International Journal of Electronics and Communications;2024-02
2. A Highly Efficient 240-GHz Power Amplifier in 0.13-μm SiGe;IEEE Microwave and Wireless Technology Letters;2024-01
3. H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G max-Core and Transmission Line-Based Zero-Degree Power Combining Networks;IEEE Journal of Solid-State Circuits;2023-11
4. High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors;IEICE Transactions on Electronics;2023-11-01
5. Research Progress of Silicon-Based Millimeter Wave Amplifiers;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14
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