A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS-Reference-Cited by-同舟云学术

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A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS

Published:2019-11 Issue:11 Volume:2 Page:268-271
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Eissa Mohamed Hussein^ORCID,Malignaggi Andrea,Kissinger Dietmar

Funder

German Federal Ministry of Education and Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8011414/8911531/08891670.pdf?arnumber=8891670

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 140- and 220-GHz Dual-Band Amplifier in 130-nm SiGe BiCMOS Process;IEEE Transactions on Terahertz Science and Technology;2024-09

2. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

3. RapidIP — Automated design of a 220–260 GHz power amplifier in a 130 nm BiCMOS technology;AEU - International Journal of Electronics and Communications;2024-04

4. Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler;International Journal of RF and Microwave Computer-Aided Engineering;2024-03-12

5. A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2024-03

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