A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations
Author:
Affiliation:
1. School of Microelectronics, Tianjin University, Tianjin, China
Funder
National Key Research and Development Program Project of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/5503868/10472157/10401235.pdf?arnumber=10401235
Reference31 articles.
1. A High-Power and Scalable 2-D Phased Array for Terahertz CMOS Integrated Systems
2. An Eight-Element 370–410-GHz Phased-Array Transmitter in 45-nm CMOS SOI With Peak EIRP of 8–8.5 dBm
3. High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure
4. A SiGe HBT 215-240 GHz DCA IQ TX/RX Chipset With Built-In Test of USB/LSB RF Asymmetry for 100+ Gb/s Data Rates
5. A 210–270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip
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