A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS-Reference-Cited by-同舟云学术

A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P _SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

Published:2023-02 Issue:2 Volume:58 Page:332-344
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yu Jiayang¹,Chen Jixin¹^ORCID,Zhou Peigen¹^ORCID,Li Huanbo¹^ORCID,Wang Zuojun¹^ORCID,Li Zekun¹^ORCID,Chen Zhe¹^ORCID,Yan Pinpin¹,Hou Debin¹^ORCID,Gao Hao²^ORCID,Hong Wei¹^ORCID

Affiliation:

1. State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China

2. Department of Electrical Engineering, Integrated Circuit Group, Eindhoven University of Technology, Eindhoven, The Netherlands

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10027566/09839445.pdf?arnumber=9839445

Reference46 articles.

1. 4.8 A Terahertz FMCW Comb Radar in 65nm CMOS with 100GHz Bandwidth

2. A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

3. A Compact Low Loss Single-Ended to Two-Way Differential Power Divider/Combiner

4. A Study of Operating Condition and Design Methods to Achieve the Upper Limit of Power Gain in Amplifiers at Near- $f_{max}$ Frequencies

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