Abstract
The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 µm InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common collector metal on a single merged device isolation area. The amplifiers using two types of devices based on the identical matching networks are fabricated for on-wafer probing tests. The custom merged-device amplifier shows clear performance advantages over the separate-device amplifier, showing a peak gain of 10.5 dB and the maximum output power of 5.2 dBm at 255 GHz.
Funder
National Research Foundation of Korea
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering