Spontaneous formation of \lbrace 1\,\bar{1}\,0\,1\rbrace InGaN quantum wells on a (1\,1\,\bar{2} \,2) GaN template and their electroluminescence characteristics-Reference-Cited by-同舟云学术

Spontaneous formation of \lbrace 1\,\bar{1}\,0\,1\rbrace InGaN quantum wells on a (1\,1\,\bar{2} \,2) GaN template and their electroluminescence characteristics

Published:2009-12-08 Issue:1 Volume:25 Page:015003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Masui Hisashi,Kamber Derrick S,Brinkley Stuart E,Wu Feng,Baker Troy J,Zhong Hong,Iza Michael,Speck James S,Nakamura Shuji,DenBaars Steven P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

2. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

3. High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

4. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

5. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscutm-Plane Sapphire Substrates;Japanese Journal of Applied Physics;2012-05-01

2. Optical Characterization of Double Peak Behavior in $10\bar{1}1$ Semipolar Light-Emitting Diodes on Miscut $m$-Plane Sapphire Substrates;Japanese Journal of Applied Physics;2012-04-19

3. Optical emission characteristics of semipolar (1\,1\,\bar{2}\,2) GaN light-emitting diodes grown on m-sapphire and stripe-etchedr-sapphire;Semiconductor Science and Technology;2012-01-19