Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscutm-Plane Sapphire Substrates-Reference-Cited by-同舟云学术

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Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscutm-Plane Sapphire Substrates

Published:2012-05-01 Issue:5R Volume:51 Page:052101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Sang-Bae,Bae Si-Young,Lee Dong-Seon,Kong Bo Hyun,Cho Hyung Koun,Song Jung-Hoon,Ahn Byung-Jun,Keading John F.,Nakamura Shuji,DenBaars Steven P.,Speck James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Effects of the narrow band gap on the properties of InN

4. Small band gap bowing in In1−xGaxN alloys

5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

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