Optical Characterization of Double Peak Behavior in $10\bar{1}1$ Semipolar Light-Emitting Diodes on Miscut $m$-Plane Sapphire Substrates-Reference-Cited by-同舟云学术

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Optical Characterization of Double Peak Behavior in $10\bar{1}1$ Semipolar Light-Emitting Diodes on Miscut $m$-Plane Sapphire Substrates

Published:2012-04-19 Issue: Volume:51 Page:052101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Sang-Bae,Bae Si-Young,Lee Dong-Seon,Kong Bo Hyun,Cho Hyung Koun,Song Jung-Hoon,Ahn Byung-Jun,Keading John F.,Nakamura Shuji,DenBaars Steven P.,Speck James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Possible origin of double-peak emission in InGaN quantum wells onm-plane free-standing GaN substrates;Japanese Journal of Applied Physics;2016-04-19

2. Combined Effect of Carrier Localization and Polarity in In_xGa_1−xN/GaN Quantum Wells;Journal of Nanoscience and Nanotechnology;2015-08-01

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