Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate-Reference-Cited by-同舟云学术

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Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

Published:2006-12-22 Issue:2 Volume:22 Page:119-124
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen H R,Hsu M K,Chiu S Y,Chen W T,Chen G H,Chang Y C,Su C C,Lour W S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

3. DC and RF performance of LP-MOCVD grown Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's with Si-delta doped GaAs layer

4. A high-performance delta -doped GaAs/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor utilizing a graded In/sub x/Ga/sub 1-x/As channel

5. Millimeter-wave power HEMTs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure;Applied Surface Science;2015-06

2. Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers;Advanced Materials Research;2011-12

3. Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate;Materials Science Forum;2011-07

4. Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate;Journal of The Electrochemical Society;2010

5. On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach;IEEE Electron Device Letters;2009-04

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