Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure-Reference-Cited by-同舟云学术

Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure

Published:2015-06 Issue: Volume:341 Page:120-126
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Chun-Chia,Chen Huey-Ing,Liu I-Ping,Chou Po-Cheng,Liou Jian-Kai,Tsai Yu-Ting,Liu Wen-Chau

Funder

Ministry of Science and Technology of the Republic of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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4. Cell-temperature determination in InGaP-(In)GaAs-Ge triple-junction solar cells;Yang;IEEE Electron Device Lett.,2011

5. A flat gain/power responses 6–18GHz power amplifier mimic with high PAE by using transformer networks;Yu;Microw. Opt. Technol. Lett.,2008

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