Millimeter-wave power HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
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4. IEEE GaAs IC Symp. Digest;Arai,1991
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1. Performance Evaluation Of Emerging Semiconductor Devices For Low Power Applications: A Review;2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22);2022-04-29
2. Fabrication of double recess structure by single lithography step using silicon-nitride-assisted process in pseudomorphic HEMTs;Microelectronic Engineering;2014-09
3. Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers;Advanced Materials Research;2011-12
4. Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate;Semiconductor Science and Technology;2006-12-22
5. Impact ionization measurements and modeling for power PHEMT;IEEE Transactions on Electron Devices;2003-02
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