High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors-Reference-Cited by-同舟云学术

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High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

Published:1994 Issue:12 Volume:42 Page:2590-2597
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Der-Wei Tu ,Duncan S.W.,Eskandarian A.,Golja B.,Kane B.C.,Svensson S.P.,Weinreb S.,Byer N.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/7960/00339801.pdf?arnumber=339801

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2013-09

2. Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers;Advanced Materials Research;2011-12

3. MMIC LNAs for Radioastronomy Applications Using Advanced Industrial 70 nm Metamorphic Technology;IEEE Journal of Solid-State Circuits;2010-10

4. Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate;Semiconductor Science and Technology;2006-12-22

5. Low Noise Quasi-Optic Receiving in Millimeter and Submillimeter Range for Geophysical and Radio Telescope Measurements;International Journal of Infrared and Millimeter Waves;2004-02

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