Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate-Reference-Cited by-同舟云学术

Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate

Published:2010 Issue:4 Volume:157 Page:H408
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Chen Li-Yang,Chen Huey-Ing,Cheng Shiou-Ying,Tsai Tsung-Han,Liu Yi-Jung,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Hsiang,Liu Wen-Chau

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate

2. Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

3. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

4. A comparative study of hydrogen sensing performances between electroless plated and thermal evaporated Pd/InP Schottky diodes

5. A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating

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1. Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals;Semiconductors;2021-07

2. A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach;Solid-State Electronics;2016-10

3. Characteristics enhancement of a GaAs based heterostructure field-effect transistor with an electrophoretic deposition (EPD) surface treated gate structure;Applied Surface Science;2015-06

4. On a transistor-type hydrogen gas sensor prepared by an electrophoretic deposition (EPD) approach;International Journal of Hydrogen Energy;2014-08