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A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

  • Published:2016-10 Issue: Volume:124 Page:5-9
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Hung Ching-Wen,Chang Ching-Hong,Chen Wei-Cheng,Chen Chun-Chia,Chen Huey-Ing,Tsai Yu-Ting,Tsai Jung-Hui,Liu Wen-Chau

Funder

Ministry of Science and Technology of the Republic of China

Advanced Optoelectronic. Technology Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Comparative studied of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method;Chou;Semicond Sci Technol,2013

2. On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure;Liu;IEEE Electron Dev Lett,2009

3. Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer;Tan;Int J Hydrogen Energy,2011

4. Application of GaN-based heterojunction FETs for advanced wireless communication;Ohno;IEEE Electron Dev Lett,2001

5. SiN-passivated-gate Al0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method;Lee;Appl Phys Lett,2009

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors;Micromachines;2020-12-24

2. Surface roughness improvement of near net shaped alumina by EPD;Journal of the Australian Ceramic Society;2019-07-04

3. Electronic Devices Based on Group III Nitrides ☆;Reference Module in Materials Science and Materials Engineering;2018
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