Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method-Reference-Cited by-同舟云学术

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Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

Published:2013-06-21 Issue:7 Volume:28 Page:074005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chou Bo-Yi,Hsu Wei-Chou,Lee Ching-Sung,Liu Han-Yin,Ho Chiu-Sheng

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074005/pdf

Reference35 articles.

1. Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

2. A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

3. Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor

4. AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

5. AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment;Microsystem Technologies;2024-08-24

2. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03

3. Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT;Silicon;2021-03-08

4. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators*;Chinese Physics B;2020-07-01

5. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs;Journal of Applied Physics;2018-05-14

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