Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-01039-x.pdf
Reference34 articles.
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2. Chakroun A, Jaouad A, Soltani A, Arenas O, Aimez V, Arès R, Maher H (2017) AlGaN / GaN MOS-HEMT device fabricated using a high quality PECVD passivation process. IEEE Electron Device Lett 38:779–782. https://doi.org/10.1109/LED.2017.2696946
3. Yue YH (2008) Yuanzheng, AlGaN/GaN MOS-HEMT with HfO2 dielectric and Al2O3 interfacial passivation layer grown by atomic layer deposition. IEEE Electron Device Lett 29:838–840. https://doi.org/10.1109/LED.2008.2000949
4. Trivedi V, Fossum JG, Chowdhury MM (2005) Nanoscale FinFETs with gate-source/drain underlap. IEEE Trans Electron Devices 52:56–62. https://doi.org/10.1109/TED.2004.841333
5. Liang X, Taur Y (2004) A 2-D analytical solution for SCEs in DG MOSFETs. IEEE Trans Electron Devices 51:1385–1391. https://doi.org/10.1109/TED.2004.832707
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1. Multigate MOS-HEMT;HEMT Technology and Applications;2022-06-24
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