Author:
Kundu Atanu,Dasgupta Arpan,Das Rahul,Chakraborty Shramana,Dutta Arka,Sarkar Chandan K.
Funder
Department of Science and Technology
Govt. of India (SERB)
Heritage institute of technology
Council of Scientific and Industrial Research
Govt. of India
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Review and critique of analytic models of MOSFET short-channel effects in subthreshold;Xie;IEEE Trans. Electron Devices,2012
2. Fundamentals of Modern VLSI Devices;Taur,2009
3. Physical insights on design and modeling of nanoscale FinFETs;Fossum,2003
4. Influence of device engineering on the analog and RF performance of SOI MOSFETs;Kilchytska;IEEE Trans. Electron Devices,2003
5. Nanoscale FinFETs with gate–source/drain underlap;Trivedi;IEEE Trans. Electron Devices,2005
Cited by
37 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献