DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node-Reference-Cited by-同舟云学术

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Published:2024-05-31 Issue:9 Volume:25 Page:1885-1897
ISSN:2234-7593
Container-title:International Journal of Precision Engineering and Manufacturing
language:en
Short-container-title:Int. J. Precis. Eng. Manuf.

Author:

Sanjay ^ORCID,Kumar Vibhor^ORCID,Vohra Anil^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12541-024-01023-6.pdf

Reference45 articles.

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5. Suddapalli, S. R., & Nistala, B. R. (2021). The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges. Journal of Computational Electronics, 20, 492–502.