On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure-Reference-Cited by-同舟云学术

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On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure

Published:2009-11 Issue:11 Volume:30 Page:1149-1151
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yi-Jung Liu ,Chih-Hung Yen ,Li-Yang Chen ,Tsung-Han Tsai ,Tsung-Yuan Tsai ,Wen-Chau Liu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5291954/05280279.pdf?arnumber=5280279

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer;Optics Letters;2022-08-08

2. Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p⁺-GaN/SiO₂/ITO tunnel junction;Optics Letters;2022-02-03

3. Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes;IEEE Electron Device Letters;2021-09

4. ITO/AlN rod-based hybrid electrodes: effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes;Applied Surface Science;2019-05

5. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes;Nanoscale Research Letters;2018-11-08

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