Tensile-strained Si layers grown on Si0.6Ge0.4and Si0.5Ge0.5virtual substrates: I. Film thickness and morphology-Reference-Cited by-同舟云学术

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Tensile-strained Si layers grown on Si0.6Ge0.4and Si0.5Ge0.5virtual substrates: I. Film thickness and morphology

Published:2007-03-07 Issue:4 Volume:22 Page:354-361
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hartmann J M,Abbadie A,Guinche Y,Holliger P,Rolland G,Buisson M,Defranoux C,Pierrel F,Billon T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Si/SiGe heterostructures: from material and physics to devices and circuits

2. High germanium content SiGe virtual substrates grown at high temperatures

3. Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates

4. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

5. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

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1. Valley population of donor states in highly strained silicon;Materials for Quantum Technology;2022-04-06

2. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates;Journal of Applied Physics;2014-09-21

3. Epitaxy of Strained Si/Si1-xGexHeterostructures;Silicon Technologies;2013-03-19

4. Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition;physica status solidi (c);2010-12-17

5. Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates;Journal of Applied Physics;2009-08-15

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