Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Published:2002-10 Issue:7 Volume:92 Page:3745-3751
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Leitz C. W.,Currie M. T.,Lee M. L.,Cheng Z.-Y.,Antoniadis D. A.,Fitzgerald E. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1499213

Reference25 articles.

1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

3. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

4. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

5. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

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