Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates
Author:
Affiliation:
1. L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como, Italy
2. IFN-CNR, L-NESS, via Anzani 42, 22100 Como, Italy
Funder
Fondazione Cariplo (Cariplo Foundation)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896076
Reference56 articles.
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3. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
4. An electrically pumped germanium laser
5. Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain
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