Affiliation:
1. STMicroelectronics
2. LETI-CEA Grenoble (Technologies Avancées)
Abstract
We have focused in this paper on the impact of the growth rate and of the grading rate on the structural properties of Si0.8Ge0.2 virtual substrates grown at 900°C in a commercial reduced pressure chemical vapour deposition reactor. Adopting a grading rate of 4% Ge / $m together with a growth rate around 140 nm min.-1 yields very high quality Si0.8Ge0.2 virtual substrates. Their macroscopic degree of strain relaxation is indeed very close to 100%, their surface root mean square roughness is around 2.3 nm and most importantly their field threading dislocation density is of the order of 6x104 cm-2 only, with almost no pile-ups.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference17 articles.
1. F. Schäffler, Semicond. Sci. Technol. 12 (1997), p.1515.
2. M.T. Currie, C.W. Leitz, T.A. Langdo, G. Taraschi, E.A. Fitzgerald and D.A. Antoniadis, J. Vac. Sci. Technol. B19 (2001), p.2268.
3. C.W. Leitz, M.T. Currie, M.L. Lee, Z. -Y. Cheng, D.A. Antoniadis and E.A. Fitzgerald, J. Appl. Phys. 92 (2002), p.3745.
4. Y Bogumilowicz, J M Hartmann, F. Laugier, G. Rolland, T. Billon, N. Cherkashin and A. Claverie, accepted for publication in J. Cryst. Growth (June 2005).
5. B. Ghyselen et al., Solid State Electron. 48 (2004), p.1285.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献