Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=28/a=302/pdf
Reference28 articles.
1. Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: H
2. ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
3. Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films
4. Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous silicon
5. Experimental evidence for the annealing of surface defects ina‐Si:H during deposition
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1. Photoconductivity in Materials Research;Springer Handbook of Electronic and Photonic Materials;2017
2. Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films;Materials Science and Engineering: B;2013-05
3. Carrier mobility, band tails and defects in microcrystalline silicon;Journal of Physics: Conference Series;2010-11-01
4. Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas;Journal of Physics D: Applied Physics;2008-04-25
5. Photovoltaics literature survey (no. 20);Progress in Photovoltaics: Research and Applications;2002
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