Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105949
Reference11 articles.
1. Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: H
2. ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
3. Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon
4. Surface states and barrier heights of metal-amorphous silicon schottky barriers
5. Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques;Journal of Physics: Condensed Matter;2002-07-04
2. Determination of bulk and surface transport properties by photocurrent spectral measurements;Applied Physics A Materials Science & Processing;2000-09
3. Photoconductivity spectroscopy of hydrogenated amorphous silicon;Philosophical Magazine B;1994-08
4. Use of the steady-state photocarrier-grating technique for the study of the surface recombination yelocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films;Philosophical Magazine B;1993-02
5. The Photocarrier Grating and Its Applications in the Study of A-Si:H Materials and Devices;MRS Proceedings;1992
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