ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques;Journal of Physics: Condensed Matter;2002-07-04
2. Structural properties of hydrogenated amorphous silicon carbide alloys;Applied Surface Science;2002-06
3. Raman and photoluminescence properties of hydrogenated amorphous silicon carbide alloys with low carbide concentration;SPIE Proceedings;2001-10-16
4. Investigation of interface state density between a-Si:H and insulating layers by ESR and photothermal deflection spectroscopy;Journal of Non-Crystalline Solids;1996-05
5. The surface properties of sputtered amorphous silicon thin films;Journal of Non-Crystalline Solids;1995-08
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