Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: H
Author:
Affiliation:
1. a Department of Electronics, Faculty of Technology , Kanazawa University , Kanazawa , 920 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818208246437
Reference12 articles.
1. Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon
2. Davis , E. A. 1973. Amorphous Semiconductors, Edited by: Le Comber , P. G. and Mort , J. 450New York: Academic Press.
3. The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
4. Annealing effects on relationships between E.S.R., electrical and optical properties in a-Si : H
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