Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

Published:1980-03 Issue:3 Volume:41 Page:273-285
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Ast D. G.¹²,Brodsky M. H.¹

Affiliation:

1. a IBM Thomas J. Watson Research Center , Yorktown Heights , New York , 10598 , US

2. b Department of Material Sciences and Engineering, Bard Hall. , Cornell University , Ithaca, New York , 14853 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818008245385

Reference11 articles.

1. On the deposition of amorphous silicon films from glow discharge plasmas of silane

2. Plasma preparations of amorphous silicon films

3. Madan , A. and Le Comber , P. G. Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear , W. pp.377CICL: University of Edinburgh.

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