Use of the steady-state photocarrier-grating technique for the study of the surface recombination yelocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

Use of the steady-state photocarrier-grating technique for the study of the surface recombination yelocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films

Published:1993-02 Issue:2 Volume:67 Page:171-180
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Haridim M.¹,Weiser K.¹,Mell H.²

Affiliation:

1. a Department of Electrical Engineering , and Solid State Institute , Technion , Haifa , Israel

2. b Fachbereich Physik , University of Marburg , Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819308207865

Reference15 articles.

1. The theory of the photoconductance under the presence of a small photocarrier grating

2. Self‐consistency and self‐sufficiency of the photocarrier grating technique

3. Chapter 2 The Optical Absorption Edge of a-Si: H

4. Chapter 9 Electronic Properties of Surfaces in a-Si: H

5. Determination of surface recombination velocity of excess carriers in amorphous silicon using the SSPG technique

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