Voltage–capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=15/a=014/pdf
Reference19 articles.
1. Quantum dot lasers: breakthrough in optoelectronics
2. Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures
3. Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation
4. Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
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2. On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers;Journal of Applied Physics;2018-08-07
3. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties;Technical Physics;2017-09
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